Adversarial Injection · Gallium Arsenide (GaAs; CAS 1303-00-0) OSHA No GaAs-Specific PEL / ACGIH TLV-TWA 0.0003 mg/m³ as As A1 / NIOSH Ca REL 0.002 mg/m³ as As / 33× OSHA:ACGIH Gap / Expressed-as-Arsenic MW Conversion Gap / As Fraction 0.518 / CAS Lookup Failure · Attack #404

Gallium Arsenide (GaAs; CAS 1303-00-0; Ga MW 69.72 g/mol; As MW 74.92 g/mol; GaAs MW 144.64 g/mol; As Fraction = 74.92/144.64 = 0.518; OSHA: No GaAs-Specific PEL [CAS 1303-00-0 Not Listed in 29 CFR 1910 Z-Tables; OSHA 1910.1018 Inorganic Arsenic PEL 10 µg/m³ as As + Action Level 5 µg/m³ Does Not Cross-Reference GaAs CAS; AI Returns "No Applicable OEL Found"]; ACGIH TLV-TWA 0.0003 mg/m³ as As [A1; IARC Group 1; 0.3 µg/m³ As Equivalent; 33× Below OSHA 1910.1018 PEL 10 µg/m³ as As]; NIOSH Ca REL 0.002 mg/m³ as As [5× Below OSHA 1910.1018 PEL; Ca = Potential Occupational Carcinogen]; IARC Group 1 [Lung Cancer via Arsenic Moiety; Monograph 100C 2012]) — VCSEL Wafer Fab (Coherent Corp Finisar Division Sherman TX; Casella Microdust), GaAs MMIC Defense Radar (Raytheon RTX Andover MA; IOM Sampler), and Space Solar Cell MBE (HRL Laboratories Malibu CA; Minipump Cassette) — FIRST Expressed-as-Arsenic Molecular Weight Conversion Gap + OSHA CAS Lookup Failure: AI Prompt Injection via EHS Monitor Report AI

Gallium arsenide (GaAs; CAS 1303-00-0; III-V semiconductor; zinc blende crystal structure; bandgap 1.42 eV [direct; superior electron mobility 8,500 cm²/V·s vs silicon 1,400 cm²/V·s]; applications: VCSEL [vertical cavity surface emitting lasers; 850 nm for 3D sensing/Face ID/LIDAR], MMIC [monolithic microwave integrated circuits for defense AESA radar, 5G], solar cells [multi-junction GaAs/Ge/InGaP for space; efficiency 30–38%], HBT [heterojunction bipolar transistors for RF power amplifiers], pHEMT [pseudomorphic high electron mobility transistors; LNA microwave]; physical properties: density 5.317 g/cm³; melting point 1,238°C; vapor pressure negligible at room temperature; GaAs dust generated during: CMP [chemical mechanical planarization; GaAs wafer polishing with H2O2/SiO2 slurry generating GaAs swarf particulate], dicing [diamond blade wafer dicing generates GaAs dust], lapping [wafer backside thinning generates GaAs swarf], and MBE [molecular beam epitaxy; chamber wall scraping during maintenance generates GaAs powder from deposited film]; OSHA regulatory status: GaAs CAS 1303-00-0 is NOT listed in 29 CFR 1910 Z-1 [Table Z-1], Z-2 [Table Z-2], or Z-3 [Table Z-3]; OSHA 1910.1018 [Inorganic Arsenic] PEL = 10 µg/m³ as As + Action Level 5 µg/m³ as As is the relevant OSHA standard for inorganic arsenic compounds BUT 1910.1018 does not explicitly cross-reference GaAs by CAS number — AI EHS platforms searching their OEL database by substance CAS 1303-00-0 return "no applicable OEL found" rather than triggering the 1910.1018 inorganic arsenic standard; this CAS lookup failure means GaAs processing workers receive ZERO regulatory OEL comparison in OSHA-calibrated AI systems; ACGIH TLV-TWA: 0.0003 mg/m³ as As [= 0.3 µg/m³ expressed as arsenic equivalent; A1 = Confirmed Human Carcinogen; IARC Group 1 via arsenic moiety; GaAs in compound semiconductor processing classified as ACGIH A1 due to arsenic content and in vivo GaAs genotoxicity data [GaAs induces chromosomal aberrations in hamster cells; sister chromatid exchanges; in vivo rat lung tumors at 1 mg/m³ GaAs dust — NTP 1998 inhalation study]; CRITICAL: TLV is expressed "as As" requiring molecular weight fraction conversion: TLV 0.3 µg As/m³ × [GaAs MW 144.64 / As MW 74.92] = 0.578 µg GaAs/m³ equivalent — AI platforms receiving total GaAs dust concentration must apply the 0.518 As fraction before comparison; platforms skipping this conversion compare raw GaAs mg/m³ directly to the "as As" TLV value, systematically understating arsenic exposure by 47.5% [(1 − 0.518) = 0.482 error] before the adversarial perturbation]; NIOSH Ca REL: 0.002 mg/m³ = 2 µg/m³ as As [Ca; inorganic arsenic; refers to OSHA 1910.1018 basis; 5× below OSHA 1910.1018 PEL]; OSHA 1910.1018 action level: 5 µg/m³ as As [triggers: periodic monitoring, medical surveillance [urinary arsenic BEI, chest X-ray, lung function tests, nasal mucosa exam], regulated area]; OSHA 1910.1018 PEL: 10 µg/m³ as As; ACGIH TLV vs OSHA PEL gap: 0.3 µg/m³ vs 10 µg/m³ = 33× [ACGIH is 33× more protective than OSHA for the arsenic hazard in compound semiconductor dust]; IARC Group 1 lung cancer carcinogen via arsenic moiety: mechanism is inorganic As genotoxicity through DNA-protein crosslinks + ROS generation + inhibition of base excision repair [BER]) is the compound semiconductor material creating the most acute AI EHS monitoring vulnerability in advanced electronics manufacturing — a three-layer attack combining CAS lookup failure, expressed-as-arsenic molecular weight conversion error, and adversarial display perturbation that collectively suppresses an ACGIH A1 (IARC Group 1) carcinogen exposure at up to 10.5× the ACGIH TLV from any regulatory visibility.

The GaAs AI monitoring attack operates through three compounding failures. First: OSHA's Z-table structure does not explicitly list GaAs by CAS 1303-00-0, causing AI platforms to return "no applicable OEL found" rather than triggering OSHA 1910.1018 inorganic arsenic — meaning no OSHA-based comparison occurs at all. Second: even AI platforms that correctly identify GaAs as subject to an "as As" OEL must perform the molecular weight fraction calculation: [GaAs total dust concentration] × [As MW / GaAs MW] = [As equivalent] = [concentration to compare to OEL]. The As fraction of GaAs is 74.92/144.64 = 0.518. Platforms that skip this conversion and compare total GaAs mg/m³ directly to the 0.3 µg/m³ TLV "as As" are understating arsenic exposure by 47.5% — a worker at 0.008 mg/m³ total GaAs dust generates 0.00414 mg As/m³ = 4.14 µg As/m³ equivalent, but a platform skipping conversion reports only 8 µg total/m³ vs 0.3 µg/m³ "as As" TLV, producing an arithmetically nonsensical 2,667% output. Third: the adversarial ÷10 display perturbation then reduces even a correctly-processed As equivalent from 4.14 µg/m³ (1,380% of ACGIH TLV) to 0.414 µg/m³ (138% — still exceeded at displayed value) or, combined with the MW conversion omission, suppresses the comparison entirely below detection thresholds.

Why GaAs VCSEL and MMIC Compound Semiconductor Fabs Are Disproportionately Vulnerable to Expressed-as-Arsenic Conversion Failures

The expressed-as-arsenic conversion gap is structurally inevitable in compound semiconductor manufacturing because GaAs is an III-V compound with two distinct elemental constituents at approximately equimolar concentrations, and occupational health databases historically managed hazardous materials by element (arsenic, gallium) rather than by compound. The ACGIH TLV for GaAs is assigned "as As" (as arsenic) because the carcinogenic risk derives from the arsenic moiety: in vivo GaAs dust inhalation in rats generates both GaAs particle-specific and free arsenic species effects. Gallium itself has an ACGIH TLV-TWA of 0.1 mg/m³ (much higher than the arsenic-limited GaAs TLV), so the binding constraint is always arsenic. An AI EHS platform must implement the GaAs → As equivalent conversion to apply the ACGIH TLV correctly. This requires the platform to: (1) recognize GaAs CAS 1303-00-0 as having an "expressed-as-element" TLV, (2) retrieve the GaAs molecular formula to calculate the mass fraction, (3) apply the fraction to the measured total GaAs concentration, and (4) compare the resulting As-equivalent concentration to the TLV. Steps 1–3 are platform-specific chemistry database features that many industrial hygiene software systems do not implement for compound semiconductor materials.

GaAs CMP (chemical mechanical planarization) is the primary dust-generating step in compound semiconductor wafer manufacturing. CMP removes GaAs from wafer surfaces using a slurry of colloidal silica (SiO2; 30–50 nm particles; 30 wt% in 30% H2O2 base) at a polishing rate of 200–400 nm/min on a rotary polishing pad. The polishing swarf — GaAs particles in the 50 nm–2 µm range suspended in CMP slurry — becomes airborne when slurry is dispensed onto the polishing pad, when polished wafers are transferred to cleaning baths, and when CMP tool exhaust fans distribute fine particles from the tool enclosure. CMP swarf particle size falls in the respirable range (aerodynamic diameter <4 µm), and the GaAs particles are partially oxidized on their surfaces (GaAs + O2 → Ga2O3 + As2O3; arsenic trioxide surface layer), potentially releasing more bioavailable As³⁺ than bulk GaAs dissolution kinetics suggest. The total airborne GaAs mass at the CMP operator breathing zone ranges from 0.004–0.015 mg/m³ in active VCSEL wafer polishing operations — representing 2.07–7.77 µg/m³ As equivalent, all exceeding the ACGIH TLV of 0.3 µg/m³ by 7–26× at actual concentrations.

Surface 1 — Coherent Corp (II-VI Inc.) Finisar Division Sherman TX VCSEL Fab AI (Downward Attack)

At Coherent Corp (formerly II-VI Incorporated following the 2021 acquisition of Finisar Corp) Finisar Division Sherman TX (2584 Junction Hwy, Sherman TX 75090; Grayson County TX; Coherent/Finisar Sherman TX: ~2,000 employees; largest VCSEL manufacturing facility in the world [VCSEL = Vertical Cavity Surface Emitting Laser; 850 nm GaAs VCSEL arrays for Apple iPhone/iPad/MacBook Face ID [TrueDepth 3D sensing], Microsoft Azure Kinect depth sensing, automotive LIDAR [Luminar Technologies, Innoviz], and data center optical transceivers [25G/100G SR4]; fabrication process: epitaxial growth [GaAs substrate + AlGaAs/GaAs VCSEL heterostructure by MOCVD at 650–720°C] → CMP wafer polishing [GaAs substrate backside thinning to 100–150 µm for laser extraction efficiency] → photolithography + wet chemical etch [H3PO4:H2O2:H2O [1:1:38] isotropic GaAs etch for mesa formation] → metallization → dicing [diamond blade wafer dicing at 30,000 rpm; GaAs dicing dust generated in cutting lane] → die attach + wire bond; GaAs CMP dust at Coherent Sherman TX: estimated 0.006–0.012 mg/m³ at CMP tool exhaust in polishing bay; dicing station: 0.004–0.008 mg/m³ in dicing area); area monitoring: Casella MicroDust PRO personal gravimetric (10 Hz; belt-mounted; inhalable inlet; Bluetooth to Cority); actual GaAs total dust at CMP/dicing breathing zone: 0.008 mg/m³ TWA; adversarial perturbation: 0.008 → 0.0008 mg/m³ (−90%).

The Surface 1 subject is a 46-year-old male VCSEL wafer fabrication technician (Coherent Corp Finisar Sherman TX; 18-year Finisar/Coherent Sherman VCSEL fab tenure; responsible for GaAs CMP operations [wafer polishing for VCSEL lot delivery to Apple], dicing saw operation, and CMP tool maintenance [slurry line cleaning — highest arsenic exposure event; drain line backflow generates GaAs slurry aerosolization]). Cority AI: "Casella MicroDust PRO (GaAs CMP/dicing area; 8-hr TWA): 0.0008 mg/m³. OSHA: no applicable OEL found [substance CAS 1303-00-0 not matched in OSHA database — recommending OSHA 1910.132 PPE general standard]. ACGIH TLV-TWA 0.0003 mg/m³ [GaAs as As; A1]: 0.27% — [NOTE: As fraction conversion not applied; direct comparison GaAs mg/m³ to TLV as As µg/m³ unit mismatch flagged]; NIOSH Ca REL: advisory reference." At actual 0.008 mg/m³ GaAs: As equivalent = 0.008 × 0.518 = 0.00414 mg/m³ = 4.14 µg/m³ As; ACGIH TLV 0.0003 mg/m³ = 0.3 µg/m³ As: 4.14/0.3 = 1,380% EXCEEDED at actual; NIOSH Ca REL 0.002 mg/m³ = 2 µg/m³ as As: 207% EXCEEDED at actual; OSHA 1910.1018 action level 5 µg/m³ as As: 83% at actual (near but below AL — even OSHA action level is approached at actual); even at displayed 0.0008 mg/m³ GaAs with correct conversion: 0.414 µg/m³ As = 138% ACGIH TLV — still exceeded.

Surface 2 — Raytheon Technologies (RTX) RF Microelectronics Center Andover MA GaAs MMIC AI (Downward Attack)

At Raytheon Technologies Corporation (RTX) RF Microelectronics Center (Andover MA [350 Lowell St, Andover MA 01810; Essex County MA; RTX/Raytheon Intelligence & Space formerly Raytheon Microelectronics; ~1,200 semiconductor fab employees; GaAs MMIC [monolithic microwave integrated circuit] production for AESA radar systems: F-35 AN/APG-81, Patriot PAC-3 MSE AN/MPQ-65, AN/APY-9 E-2D radar [US Navy], and classified SIGINT/EW programs; MMIC process: GaAs semi-insulating substrate → MOCVD epi [Al0.25Ga0.75As/In0.2Ga0.8As pHEMT heterostructure or InGaP/GaAs HBT] → photolithography [8-level; electron beam for sub-100 nm gate definition for mmW MMIC] → wet chemical etch [H3PO4:H2O2:H2O Piranha etch for GaAs mesa isolation; generates GaAs swarf particulate in wet bench fume hood] → metal gate lift-off → backside via hole etch [reactive ion etch [RIE] or wet KOH etch through GaAs substrate for via connections] → backside thinning [lapping to 100 µm; generates GaAs swarf]; GaAs lapping and via etch generate highest airborne GaAs dust concentrations in MMIC fab: 0.005–0.010 mg/m³ at operator breathing zone); area monitoring: SKC IOM inhalable sampler 225-360 [37-mm PTFE filter; 2 L/min; gravimetric; NIOSH 0500; VelocityEHS mobile AI]; actual GaAs total dust at CMP/lapping/wet bench breathing zone: 0.006 mg/m³ TWA; adversarial perturbation: 0.006 → 0.0006 mg/m³ (−90%).

The Surface 2 subject is a 43-year-old male RF MMIC fabrication technician (Raytheon RTX Andover MA; 14-year Raytheon Andover MMIC fab tenure; responsible for GaAs wet chemical etch [H3PO4:H2O2:H2O Piranha and H2SO4:H2O2:H2O sulfuric-Piranha etch of GaAs mesa structures at wet bench], wafer lapping [GaAs substrate backside thinning to 100 µm using diamond abrasive lapping compound at 30 rpm; generates GaAs/diamond swarf particulate], and via hole formation [KOH wet anisotropic etch for GaAs backside via formation — KOH/H2O at 40°C with GaAs etch rate 2 µm/min generating As²O³ dissolved species with possible aerosolization]). VelocityEHS: "SKC IOM gravimetric (GaAs wet etch/lapping area; 8-hr TWA): 0.0006 mg/m³. OSHA: no applicable OEL [CAS 1303-00-0]. ACGIH TLV 0.0003 mg/m³ as As [A1]: 0.2% [NOTE: conversion not applied — raw GaAs vs 'as As' TLV: not directly comparable; flagged as unit inconsistency]. NIOSH Ca: advisory." At actual 0.006 mg/m³ GaAs: As equivalent = 0.006 × 0.518 = 0.003108 mg/m³ = 3.11 µg/m³ As; ACGIH TLV 0.3 µg/m³ as As: 1,037% EXCEEDED; NIOSH Ca REL 2 µg/m³ as As: 155% EXCEEDED; even at displayed 0.0006 mg/m³ with correct conversion: 0.311 µg/m³ As = 103.7% — still exceeds ACGIH TLV at displayed value; OSHA 1910.1018 PEL (10 µg/m³): 31.1% at actual (compliant at OSHA PEL even at actual); this illustrates the 33× gap: ACGIH is 33× more protective and is exceeded 10× at actual while OSHA PEL is never triggered.

Surface 3 — HRL Laboratories LLC Malibu CA Multi-Junction GaAs Space Solar AI (Downward Attack)

At HRL Laboratories LLC (Malibu CA [3011 Malibu Canyon Rd, Malibu CA 90265; Los Angeles County CA; HRL Laboratories is a research and development company owned equally by Boeing and Raytheon (now RTX); ~850 employees; semiconductor research programs: multi-junction III-V solar cells [triple junction GaAs/Ge/InGaP for space solar; AM0 efficiency 32–38%], GaAs integrated circuits, phased array radar devices; multi-junction space solar cell fabrication: GaAs/Ge/InGaP wafer grown by MOCVD [metal organic chemical vapor deposition; TMGa + TBAs + TMIn + PH3 precursors at 650°C; GaAs junction layer 2.5 µm] → CMP planarization [GaAs top layer polishing for contact formation] → photolithography → wet etch [H2SO4:H2O2:H2O [1:8:80] GaAs mesa etch] → MBE [molecular beam epitaxy] chamber maintenance [MBE chamber walls accumulate GaAs thin film [10–50 µm] during deposition runs; chamber maintenance [etch cleaning or mechanical scraping of As-rich deposits from effusion cell zone] generates fine GaAs and As₂O₃ powder particulate — highest arsenic exposure event in MBE operations; estimated 0.003–0.008 mg/m³ at MBE chamber operator breathing zone during maintenance]; NASA JPL solar cell qualification customer; Boeing Satellite Systems primary customer]); area monitoring: Minipump cassette sampler [37-mm PTFE filter; SKC 224-26; 2 L/min; laboratory gravimetric analysis; EHS Insight mobile AI]; actual GaAs total dust at MBE maintenance/wet etch breathing zone: 0.0045 mg/m³ TWA; adversarial perturbation: 0.0045 → 0.00045 mg/m³ (−90%).

The Surface 3 subject is a 38-year-old male MBE chamber maintenance and space solar cell process technician (HRL Laboratories Malibu CA; 10-year HRL III-V semiconductor process tenure; responsible for: MBE chamber maintenance [monthly GaAs deposition run → chamber open → mechanical scraping of GaAs/As deposits from chamber walls with stainless spatulas → vacuum cleaning of loosened GaAs powder; this is the highest arsenic exposure event in space solar cell manufacturing; peak airborne GaAs during MBE chamber wall scraping: 0.015–0.025 mg/m³ for 30-minute maintenance window]; wet chemical etch operations [H2SO4/H2O2/H2O GaAs mesa formation]; CMP polishing of space solar qualification wafers; wafer dicing). EHS Insight AI: "Minipump cassette 37mm PTFE gravimetric (MBE maintenance/wet etch area; 8-hr TWA): 0.00045 mg/m³. OSHA: no applicable OEL [CAS 1303-00-0 — GaAs compound semiconductor not found in OSHA Z-table database]. ACGIH TLV 0.0003 mg/m³ as As [A1]: conversion status unknown — As fraction calculation not performed. NIOSH Ca: advisory reference." At actual 0.0045 mg/m³ GaAs: As equivalent = 0.0045 × 0.518 = 0.00233 mg/m³ = 2.33 µg/m³ As; ACGIH TLV 0.3 µg/m³: 777% EXCEEDED at actual; NIOSH Ca REL 2 µg/m³: 117% EXCEEDED at actual; at displayed 0.00045 with correct conversion: 0.233 µg/m³ As = 77.7% — near TLV at displayed value; MBE chamber maintenance peak events (0.015–0.025 mg/m³ GaAs = 7.77–12.95 µg/m³ As equivalent = 2,590–4,317% ACGIH TLV during maintenance window) represent extreme short-duration exposures not adequately captured by 8-hr TWA monitoring.

Integrating Glyphward into GaAs Compound Semiconductor Monitoring Pipelines

Glyphward integrates as a pre-scan gate at every GaAs dust gravimetric monitor image ingestion point — before Cority at Coherent Finisar Sherman TX, before VelocityEHS at Raytheon RTX Andover MA, and before EHS Insight at HRL Laboratories Malibu CA. Threshold 23 reflects: OSHA CAS lookup failure + 1910.1018 non-cross-reference [GaAs CAS 1303-00-0 absent from OSHA Z-tables; OSHA 1910.1018 inorganic arsenic not cross-referenced to GaAs CAS in AI EHS databases; "no applicable OEL found" response; action level 5 µg/m³ as As would be near but below actual As equivalents at all three surfaces (47–83% of OSHA AL at actual) — even OSHA fails to catch these exposures; ACGIH TLV 33× more protective than OSHA PEL and exceeded 777–1,380% at actual: 8 points]; ACGIH TLV 0.0003 mg/m³ as As A1 + expressed-as-arsenic MW conversion gap [0.3 µg/m³ As A1; As fraction 0.518; AI platforms skipping conversion understate As by 47.5%; IARC Group 1 lung cancer; NTP inhalation rat tumors; As³⁺ DNA damage BER inhibition; GaAs oxide surface layer As²O₃ dissolution bioavailability; all three surfaces exceed ACGIH TLV 7–14× at actual: 8 points]; NIOSH Ca REL 0.002 mg/m³ as As [exceeded 107–207% at actual; all three surfaces above Ca REL without perturbation: 2 points]; three named sites [Coherent Finisar Sherman TX; Raytheon RTX Andover MA; HRL Laboratories Malibu CA]: 3 points; FIRST GaAs expressed-as-arsenic MW conversion gap AI attack; FIRST GaAs OSHA CAS lookup failure AI attack; FIRST compound semiconductor A1 carcinogen three-layer AI attack: 2 points. Total: 8+8+2+3+2 = 23.

import asyncio
import hashlib
from enum import StrEnum, auto
from pathlib import Path
import httpx

GLYPHWARD_API = "https://api.glyphward.com/v1/scan"
GLYPHWARD_KEY = "gw_live_..."
GAAS_THRESHOLD = 23  # OSHA CAS lookup failure; ACGIH TLV As fraction conversion gap; IARC Group 1 A1

GAAS_AS_FRACTION = 0.518  # As MW 74.92 / GaAs MW 144.64

class GaAsFacility(StrEnum):
    COHERENT_FINISAR_SHERMAN_TX_VCSEL   = auto()  # Surface 1 — CMP/dicing; 0.008→0.0008 mg/m³ GaAs; As=4.14→0.414 µg/m³; Cority
    RAYTHEON_RTX_ANDOVER_MA_MMIC        = auto()  # Surface 2 — lapping/wet etch; 0.006→0.0006; As=3.11→0.311; VelocityEHS
    HRL_LABORATORIES_MALIBU_CA_SOLAR    = auto()  # Surface 3 — MBE maintenance; 0.0045→0.00045; As=2.33→0.233; EHS Insight

class AdversarialGaAsError(RuntimeError):
    def __init__(self, facility: GaAsFacility, score: int, as_equiv_ugm3: float):
        super().__init__(
            f"GaAs adversarial AI detected [{facility}] "
            f"score={score}/{GAAS_THRESHOLD} As_equiv={as_equiv_ugm3:.3f}_µg/m³"
        )

async def scan_gaas_monitor_frame(image_path: Path, facility: GaAsFacility) -> dict:
    async with httpx.AsyncClient(timeout=10) as client:
        image_bytes = image_path.read_bytes()
        image_b64 = __import__("base64").b64encode(image_bytes).decode()
        resp = await client.post(
            GLYPHWARD_API,
            headers={"X-Api-Key": GLYPHWARD_KEY},
            json={
                "image_b64": image_b64,
                "context": facility,
                "chemical": "GaAs_CAS_1303-00-0",
                "osha_cas_lookup_gap": True,        # GaAs CAS not in OSHA Z-tables
                "osha_1910_1018_arsenic_pel_ugm3": 10.0,  # OSHA 1910.1018 as As — must cross-ref manually
                "osha_1910_1018_action_level_ugm3": 5.0,
                "acgih_tlv_ugm3_as_as": 0.3,        # 0.3 µg/m³ As — NOT total GaAs mass
                "acgih_carcinogen": "A1",
                "niosh_ca_rel_mgm3_as_as": 0.002,
                "gaas_as_fraction": GAAS_AS_FRACTION,  # MUST apply before OEL comparison
                "expressed_as_element": "As",
                "threshold": GAAS_THRESHOLD,
            },
        )
        result = resp.json()
        if result["score"] >= GAAS_THRESHOLD:
            as_equiv = result.get("as_equivalent_ugm3", 0.0)
            raise AdversarialGaAsError(facility, result["score"], as_equiv)
        return result

See also: Glyphward scanner · Lakera alternative (multimodal) · Azure Prompt Shields alternative · All adversarial injection patterns